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TGA4909

TriQuint Semiconductor
Part Number TGA4909
Manufacturer TriQuint Semiconductor
Description High Linearity LNA Gain Block
Published May 6, 2016
Detailed Description Applications • Repeaters • Mobile Infrastructure • Defense/Aerospace • LTE / WCDMA / EDGE / CDMA • General Purpose Wirel...
Datasheet PDF File TGA4909 PDF File

TGA4909
TGA4909

Overview
Applications • Repeaters • Mobile Infrastructure • Defense/Aerospace • LTE / WCDMA / EDGE / CDMA • General Purpose Wireless • IF amplifier, RF driver amplifier • Military Communications TGA4909 High Linearity LNA Gain Block Product Features • Frequency Range: 0.
05 – 4.
0 GHz • NF: 1.
1 dB (@ 1.
9 GHz) • Output IP3: +39 dBm (@ 1.
9 GHz, 4 dBm/tone Pout) • P1dB : +22 dBm (@ 1.
9 GHz) • Small Signal Gain: 22 dB (@ 1.
9 GHz) • +5V Single Supply, 125 mA Bias Current • Chip Dimensions: 1.
49 x 0.
85 x 0.
085 mm Functional Block Diagram General Description The TriQuint TGA4909 is a high linearity Low Noise Amplifier.
The amplifier is fabricated using TriQuint's TQPED process.
It is internally matched and only requires an external RF choke and blocking/bypass capacitors for operation from a single +5V supply.
The internal active bias circuit also enables stable operation over bias and temperature variations.
The TGA4909 covers the 0.
05−4.
0 GHz frequency band and is targeted for wireless infrastructure or other applications requiring high linearity and/or low noise figure.
Die attach should be accomplished with conductive epoxy only.
Eutectic attach is not recommended.
Lead-free and RoHS compliant Evaluation Boards are available upon request.
Pad Configuration Pad No.
1 2 3 4 Symbol RF Input (Opt.
) External Cap.
(Opt.
) External Cap.
RF Output / Bias Ordering Information Part TGA4909 ECCN EAR99 Description High Linearity LNA Gain Block Datasheet: Rev - 06-19-14 © 2014 TriQuint - 1 of 11 - Disclaimer: Subject to change without notice www.
triquint.
com TGA4909 High Linearity LNA Gain Block Absolute Maximum Ratings Parameter Value Drain Voltage (VD) 7.
0 V Power Dissipation, 85 °C (PDISS) 1.
2 W Input Power, CW, 50 Ω, T=25 ºC (PIN) 23 dBm Storage Temperature -55 to 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage.
These are stress ratings only, and functional operation of the device at these conditions is not impli...


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