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RA254

Diotec
Part Number RA254
Manufacturer Diotec
Description Silicon-Rectifiers
Published May 8, 2016
Detailed Description RA2505 ... RA2510 8.5 4.2 Version 2014-07-30 Dimensions - Maße [mm] 5.6 ±0.26.2 RA2505 ... RA2510 Silicon-Rectifier...
Datasheet PDF File RA254 PDF File

RA254
RA254

Overview
RA2505 .
.
.
RA2510 8.
5 4.
2 Version 2014-07-30 Dimensions - Maße [mm] 5.
6 ±0.
26.
2 RA2505 .
.
.
RA2510 Silicon-Rectifiers – Button Diodes Silizium-Gleichrichter – Knopf-Zellen Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform lose Marking: Kennzeichnung: Colored ring denotes “cathode” Farbiger Ring kennzeichnet “Kathode” 25 A 50 .
.
.
1000 V Button 1.
9 g Maximum ratings Type Typ RA2505 RA251 RA252 RA254 RA256 RA258 RA2510 Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600 800 1000 Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 50 100 200 400 600 800 1000 Max.
average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TC = 110°C IFAV IFSM TA = 25°C i2t Tj TS © Diotec Semiconductor AG http://www.
diotec.
com/ 25 A 375/400 A 680 A2s -50.
.
.
+175°C -50.
.
.
+175°C 1 RA2505 .
.
.
RA2510 Characteristics Forward Voltage – Durchlass-Spannung Tj = 25°C Leakage current Sperrstrom Tj = 25°C Tj = 100°C Thermal resistance junction to case (terminal) Wärmewiderstand Sperrschicht – Gehäuse (Anschluss) IF = 80 A VR = VRRM VR = VRRM VF IR IR RthC Kennwerte < 1.
1 V < 5 µA < 250 µA < 1.
0 K/W 120 [%] 100 80 60 40 20 IFAV 0 0 TC 50 100 150 [°C] Rated forward current versus case temperature Zul.
Richtstrom in Abh.
von der Gehäusetemp.
103 [A] 102 10 Tj = 25°C 1 IF 10-1 375a-(25a-1,1v) 0.
4 VF 0.
8 1.
0 1.
2 1.
4 [V] 1.
8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 103 [A] 102 îF 1...


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