| Part Number | BUT12AF |
| Manufacturer | NXP |
| Title | Silicon diffused power transistors |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS • Converters • Inverters • Switching reg... |
| Features |
e see Figs 2 and 4 see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 6 5 8 20 23 0.8 A A A A W µs see Figs 7 and 9 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
1997 Aug 13
1
Philips Semiconductors
Product specifica...
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| File Size | 78.04KB |
| Datasheet |
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BUT12A : SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V 1.0 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tstg .
BUT12A : High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage BUT12; BUT12A APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage 2 1 MBB008 3 MBK106 1 2 3 PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT12 BUT12A VCEO collector-emitter voltage BUT12 BUT12A VCEsat ICsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 3 and 4 see Fig..
BUT12AF : SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V 1.0 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tstg.
BUT12AF : ·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT12F BUT12AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT12F BUT12AF BUT12F BUT12AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 8 20 4 6 TC=25 23 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Open base Ope.
BUT12AI : Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Inductive fall time CONDITIONS VBE = 0 V TYP. 5 MAX. 1000 450 8 20 110 1.5 300 UNIT V V A A W V A ns Ths ≤ 25 ˚C IC = 5 A; IB = 0.86A ICon = 5 A; IBon .
BUT12AX : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 23 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERIS.
BUT12AX : ·With TO-220F package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT12AX Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1000 450 9 8 20 4 6 23 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS.