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BUT12AI

Part Number	BUT12AI
Manufacturer	NXP
Description	Silicon Diffused Power Transistor
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved ...
Datasheet	BUT12AI PDF File

Overview

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Inductive fall time CONDITIONS VBE = 0 V ...

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