PDEV2220Y

PDEV2220V : These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 20V RDSON 300m ID 800mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications SOT963 Dual Pin Configuration D1G2 S2 D1 G1 G2 Applications D2  Notebook  Load Switch  Networking  Hand-held Instruments S1 G1 D2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwis.

PDEV2220Z : These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 20V RDSON 300m ID 800mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications SOT363 Dual Pin Configuration D1 G2 S2 S1 G1 D2 G1 D1 G2 S1 Applications D2  Notebook  Load Switch  Networking  Hand-held Instruments S2 Absolute Maximum Ratings Tc=25℃ unless otherwis.

PDEV2120Y : These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT563 Dual Pin Configuration BVDSS 20V -20V RDSON 300m 600m ID 800mA -400mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications D1 G2 S2 S1 G1 D2 D1 D2 Applications G1 G2 S1 S2  Notebook  Load Switch  Networking  Hand-held Instruments Absolute Maximum Ratings Tc.

PDEV2120Z : These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT363 Dual Pin Configuration BVDSS 20V -20V RDSON 300m 600m ID 800mA -400mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications D1 G2 S2 G1 S1 G1 D2 D1 D2 G2 S1 Applications  Notebook  Load Switch  Networking  Hand-held Instruments S2 Absolute Maximum Ratings T.

PDEV2219Y : These dual P Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT563 Dual Pin Configuration D1 G2 S2 D1 G1 D2 G2 BVDSS -20V RDSON 600m ID -400mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications Applications  Notebook  Load Switch  Networking  Hand-held Instruments S1 G1 D2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless othe.

PDEV2219Z : These dual P Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT363 Dual Pin Configuration D1 S2 G2 D1 G1 D2 G2 BVDSS -20V RDSON 600m ID -540mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications Applications  Notebook  Load Switch  Networking  Hand-held Instruments D2 G1 S1 S1 S2 Absolute Maximum Ratings Tc=25℃ unless othe.

PDEV2220V : These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 20V RDSON 300m ID 800mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications SOT963 Dual Pin Configuration D1G2 S2 D1 G1 G2 Applications D2  Notebook  Load Switch  Networking  Hand-held Instruments S1 G1 D2 S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwis.

PDEV2220Z : These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 20V RDSON 300m ID 800mA Features  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications SOT363 Dual Pin Configuration D1 G2 S2 S1 G1 D2 G1 D1 G2 S1 Applications D2  Notebook  Load Switch  Networking  Hand-held Instruments S2 Absolute Maximum Ratings Tc=25℃ unless otherwis.