DatasheetsPDF.com

PDEV2120Y

Potens semiconductor
Part Number PDEV2120Y
Manufacturer Potens semiconductor
Description Dual P+N Channel MOSFETs
Published Aug 20, 2018
Detailed Description 20V N+P Dual Channel MOSFETs PDEV2120Y General Description These N+P dual Channel enhancement mode power field effect ...
Datasheet PDF File PDEV2120Y PDF File

PDEV2120Y
PDEV2120Y

Overview
20V N+P Dual Channel MOSFETs PDEV2120Y General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT563 Dual Pin Configuration BVDSS 20V -20V RDSON 300m 600m ID 800mA -400mA Features  Fast switching  Green Device Available  Suit for 1.
5V Gate Drive Applications D1 G2 S2 S1 G1 D2 D1 D2 Applications G1 G2 S1 S2  Notebook  Load Switch  Networking  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)