| Part Number | SLP8N65S |
| Manufacturer | Maple Semiconductor |
| Title | N-Channel MOSFET |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to ... |
| Features |
- 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
TO-220
TO-220F
G
GDS
GDS
S
Absolute Maximum Ratings TC = 25℃ unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM VGSS EAS IAR E...
|
| File Size | 495.66KB |
| Datasheet |
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SLP8N65C : This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted S.
SLP8N65U : This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted S.