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SLP8N65C

Maple Semiconductor
Part Number SLP8N65C
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLP8N65C / SLF8N65C SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Map...
Datasheet PDF File SLP8N65C PDF File

SLP8N65C
SLP8N65C

Overview
SLP8N65C / SLF8N65C SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 7.
5A, 650V, RDS(on) typ.
= 1.
2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N65C SLF8N65C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga...


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