| Part Number | STP25N10F7 |
| Manufacturer | STMicroelectronics |
| Title | N-CHANNEL POWER MOSFET |
| Description | th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power... |
| Features |
Order codes
STD25N10F7 STF25N10F7 STP25N10F7
VDSS 100 V 100 V 100 V
RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω
ID 25 A 19 A 25 A
PTOT 40 W 25 W 50 W
1. @ VGS = 10 V
• Ultra low on-resistance • 100% avalanche tested Applications • Switching applications ' Ć7$% * Description th These devic... |
| File Size | 1.23MB |
| Datasheet |
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STP25N10F7 : ·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 100 V ±20 V 25 A 100 A 50 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX UNIT 3 ℃/W 62.5 ℃/W isc website：ww.