DatasheetsPDF.com

STP25N10F7

INCHANGE
Part Number STP25N10F7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 14, 2020
Detailed Description isc N-Channel MOSFET Transistor STP25N10F7 FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100...
Datasheet PDF File STP25N10F7 PDF File

STP25N10F7
STP25N10F7

Overview
isc N-Channel MOSFET Transistor STP25N10F7 FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
035Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure.
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)