SFP120N80

SFP120N80B : SFP(B)120N80B N-MOSFET 80V, 120A, 5.5mΩ Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness Product Summary VDS RDS(on)@VGS=10V ID 80V 5.5 mΩ 120A Application Power switching application UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications Part ID Package Type Marking SFP120N80B SFB120N80B TO-220 TO-263 120N80B 120N80B Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 100°C (Silicon limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1mH,Rg=25Ω, ID.

SFP120N85 : Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Application Motor Drives UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications SFP(B)120N85 N-MOSFET 85V, 120A, 5.5mΩ Product Summary VDS RDS(on)@VGS=10V ID 85V 5.5 mΩ 120A Part ID Package Type Marking SFP120N85 SFB120N85 TO-220 TO-263 120N85 120N85 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1mH,Rg=25Ω, ID=sweep(14A~46A)) G.