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SFP120N80B

SCILICON
Part Number SFP120N80B
Manufacturer SCILICON
Description N-MOSFET
Published Mar 22, 2019
Detailed Description SFP(B)120N80B N-MOSFET 80V, 120A, 5.5mΩ Features Adanced trench process technology Fully characterized Avalance voltage...
Datasheet PDF File SFP120N80B PDF File

SFP120N80B
SFP120N80B

Overview
SFP(B)120N80B N-MOSFET 80V, 120A, 5.
5mΩ Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness Product Summary VDS RDS(on)@VGS=10V ID 80V 5.
5 mΩ 120A Application Power switching application UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications Part ID Package Type Marking SFP120N80B SFB120N80B TO-220 TO-263 120N80B 120N80B Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 100°C (Silicon limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1mH,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS Value 80 Unit V ID ID pulse 120 90 450 A EAS VGS Ptot Tj , Tstg 1200 ±20 220 -55.
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+150 mJ V W ℃ Page 1 SFP(B)120N80B Thermal Resistance Parameter Thermal r...


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