MT5C1001

MT5C1001 : The MT5C1001 employs low power, high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability. For flexibility in high-speed memory applications, ASI offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE|) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH while CE\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled. This allows system desig.

MT5C1001 : The MT5C1001 employs low power, high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability. For flexibility in high-speed memory applications, Micross offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE|) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH while CE\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled. This allows system des.

MT5C1005 : The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, ASI offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH while CE\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operation from a single +.

MT5C1005 : .

MT5C1005 : The MT5C1005 is organized as a 262,1.

MT5C1008 : The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. For design flexibility in high-speed memory applications, this device offers dual chip enables (CE1\, CE2) and output enable (OE\). These control pins can place the outputs in High-Z for additional flexibility in system design. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. Writing to these devices is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW..

MT5C1008 : The MT5ClO08 is organized as a .

MT5C1008LL : C No. 111 The MT5C1008 SRAM is a high-performance CMOS static RAM organized as 131, 072 words by 8 bits, offering low active power and ultra low standby and data retention current levels. Easy memory expansion is provided by an active LOW Chip Enable (CE1\), an active HIGH Chip Enable (CE2), and active Low Output Enable (OE\), and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1\) and Write Enable (WE\) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable One (CE1\) a.

MT5C1009 : SRAM MT5C1009 128K x 8 SRAM WITH CHIP & OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-89598 •MIL-STD-883 FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retention • Low power standby • High-performance, low-power CMOS process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ and OE\ options. • All inputs and outputs are TTL compatible OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access MARKING -12 (IT only) -15 -20 -25 -35 -45 -55* -70* • Package(s)• Ceramic DIP (400 mil) Ceramic DIP (600 mil) Ceramic LCC Ceramic LCC Ceramic Flatpack Ceramic SOJ Ceramic SOJ .