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MT5C1008

Part Number	MT5C1008
Manufacturer	ASI
Description	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
Published	Aug 10, 2005
Detailed Description	SRAM Austin Semiconductor, Inc. 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-89598...
Datasheet	MT5C1008 PDF File

Overview

SRAM Austin Semiconductor, Inc.
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-89598 •MIL-STD-883 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 MT5C1008 PIN ASSIGNMENT (Top View) 32-Pin DIP (C, CW) 32-Pin CSOJ (SOJ) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 FEATURES • • • • • • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE1\, CE2, and OE\ options.
• All inputs and outputs are TTL compatible 32-Pin LCC (ECA) 4 3 2 1 32 31 30 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access • Package(s)• Ceramic DIP (400 mil) Ceramic DIP (600 mil) Ceramic LCC Ceramic LCC Ceramic Flatpack Ceramic SOJ Ceramic SOJ • 2V data retention/low power MARKING -12 (contact factory) -15 -20 -25 -35 -45 -55* -70* A7 A6 A5 A4 A3 A2 A1 A0 DQ1 5 6 7 8 9 10 11 12 13 A12 A14 A10 6 NC VCC A15 CE2 32-Pin Flat Pack (F) 29 28 27 26 25 24 23 22 21 WE \ A13 A8 A9 A11 OE \ A10 CE1\ DQ8 14 15 16 17 18 19 20 DQ2 DQ3 VSS DQ4 DQ5 DQ6 DQ7 GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
For design flexibility in high-speed memory applications, this devic...

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