2SD2151

2SD2150 : Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 Collector power dissipation PC 0.5 2 Junction temperature Tj 150 Storage temperature Tstg ∗1 Single pulse Pw=10ms ∗2 Mounted on a 40×40×0.7mm Ceramic substrate. −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W ∗2 °C °C zDimensions(Unit : mm) 2SD2150 4.5.

2SD2150 : Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation VCBO VCEO VEBO IC PC 40 20 6 2000 500 V V V mA mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 1. BASE 2. COLLECTO 3. EMITTER SOT-89 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VC.

2SD2150 : Production specification LOW FREQUENCY TRANSISTER（20V，3A） FEATURES z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A). z Excellent current gain characteristics. z Complements the 2SB1424. Pb Lead-free 2SD2150 Structure Epitaxial planar type NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD2150 CFR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector power dissipation 40 V 20 V 6V 3 A(DC) 5 A(Pulse)*1 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature *1 Single p.

2SD2150 : www.DataSheet.co.kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR NPN FEATURES Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO .

2SD2150 : www.DataSheet.co.kr 2SD2150 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 40 20 6 3 500 150 -55 to +150 Unit V V V A mW ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=50µA, I E =0 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO 40 20 6 - - 0.1 0.1 V V V µA µA Collector-Emitter Breakdown Voltage IC=1mA, I B =0 Emitter-Base .

2SD2150 : www.DataSheet.co.kr SMD Type Low Frequency Transistor 2SD2150 Transistors SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +0.1 0.48-0.1 1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 20 6 3 0.5 150 -55 to +150 Unit V V V A W Electrical Ch.

2SD2150 : Elektronische Bauelemente 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A Collector 2 MARKING CFR CFS 1 Base 3 Emitter SOT-89 4 A E B F G H J 123 C BCE D K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Collector-Base Voltage Collector-Emitter V.

2SD2150-HF : SMD Type NPN Transistors 2SD2150-HF Transistors ■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 40 20 6 3 500 150 -55 to 150 Unit V A mW ℃ 1.Base 2.Collector 3.Emitter ■ Electrical Characteristics Ta = 25℃ Parameter Collector- ba.

2SD2151 : Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit: mm 0.7±0.1 s Features q q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 80 7 20 10 30 2 150 –55 to +150 Unit V V V A A W ˚C ˚C Solder Dip Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Sy.

2SD2151 : ·With TO-220Fa package ·Low collector to emitter saturation voltage ·Large collector current IC APPLICATIONS ·For power switching applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 130 80 7 10 20 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistor.

2SD2153 : 2SD2153 Transistors High gain amplifier transistor (25V, 2A) 2SD2153 !Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base (2) Collector (3) Emitter 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 25 6 2 3 0.5 150 −55 ∼ +150 Unit V V V A(DC) A(Pulse) ∗.

2SD2153 : Elektronische Bauelemente 2SD2153 2A , 30V NPN Plastic Encapsulated Transistor FEATURES Small Flat Package General Purpose Application CLASSIFICATION OF hFE(1) Product-Rank 2SD2153-U Range 560~1200 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 2SD2153-V 820~1800 MARKING DN PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch Collector 2 1 Base 3 Emitter SOT-89 A 1 B 2 C 3 E EC 4 B F G H J D K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 1.40 4.60 4.25 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise .

2SD2153 : SMD Type Transistors High Gain Amplifier Transistor 2SD2153 Features Low saturation voltage. Excellent DC current gain characteristics. SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 +0.10.40 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 25 6 2 0.5 150 -55 to +150 Unit V V V A W 1. Base 2. Collector 3. Emiitter Electrical Characteristics Ta = 25 P.

2SD2155 : .

2SD2155 : ·With TO-3PL package ·Complement to type 2SB1429 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 15 1.5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specificatio.

2SD2155 : ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SB1429 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tst.