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2SD2150

Part Number	2SD2150
Manufacturer	Rohm
Description	Transistor
Published	Apr 3, 2005
Detailed Description	Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Ex...
Datasheet	2SD2150 PDF File

Overview

Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat).
VCE(sat) = 0.
2V(Typ.
) （IC / IB = 2A / 0.
1A） 2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 Collector power dissipation PC 0.
5 2 Junction temperature Tj 150 Storage temperature Tstg ∗1 Single pulse Pw=10ms ∗2 Mounted on a 40×40×0.
7mm Ceramic substrate.
−55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W ∗2 °C °C zDimensions(Unit : mm) 2SD2150 4.
5...

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