BUV26G

BUV26 : The BUV26 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Collector Peak Current (t p 10ms) Base Current Base Peak Current (t p 10ms) Total Dissipation at Tc 25 o C Total Dissipation at T c 60 o C Storage Temperature Max. Operating Junction Temperature Value 180 90 7 14 25 4 6 85 65 -65 to +175 175 Unit V V V A A A .

BUV26 : TO−220 Electronic versions are uncontrolled except when ac.

BUV26 : ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 90 7 14 25 4 6 85 150 -65~150 UNIT V V V A A A A.

BUV26 : SEMICONDUCTORS BUV26 – BUV26A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Value Symbol VCBO VCEO VEBO IC ICM IB IBM Pt Tj Tstg Ratings BUV26 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Current Power Dissipation Junction Temperature Storage Temperature range tp = 10ms 85 150 tp = 10ms IE = 0 IB = 0 IC = 0 www.DataSheet.net/ Unit BUV26A 200 100 5 14 25 4 6 65 V V V A A A A W °C -65 to 15.

BUV26 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 14 A ICM Collector Current-Peak 25 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 .

BUV26A : ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 100 5 14 25 4 6 65 150 -65~150 UNIT V V V A A A .

BUV26A : SEMICONDUCTORS BUV26 – BUV26A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Value Symbol VCBO VCEO VEBO IC ICM IB IBM Pt Tj Tstg Ratings BUV26 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Current Power Dissipation Junction Temperature Storage Temperature range tp = 10ms 85 150 tp = 10ms IE = 0 IB = 0 IC = 0 www.DataSheet.net/ Unit BUV26A 200 100 5 14 25 4 6 65 V V V A A A A W °C -65 to 15.

BUV26AF : ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUV26F BUV26AF BUV26F VCEO Collector-Emitter Voltage BUV26AF VEBO IC ICM IB B BUV26F/AF VALUE 180 UNIT VCES Collector-Emitter Voltage VBE= 0 V 200 90 V 100 5 14 25 4 6 18 150 -65~150 www.DataSheet.net/ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temper.

BUV26F : ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUV26F BUV26AF BUV26F VCEO Collector-Emitter Voltage BUV26AF VEBO IC ICM IB B BUV26F/AF VALUE 180 UNIT VCES Collector-Emitter Voltage VBE= 0 V 200 90 V 100 5 14 25 4 6 18 150 -65~150 www.DataSheet.net/ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temper.