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BUV26

Part Number	BUV26
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Oct 22, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) ·High Switc...
Datasheet	BUV26 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 14 A ICM Collector Current-Peak 25 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
92 ℃/W BUV26 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc S...

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