| Part Number | 2SK1647 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switchin... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1647(L), 2SK1647(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sour... |
| File Size | 30.04KB |
| Datasheet |
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2SK1642 : .
2SK1643 : ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed high current switching applications ·DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Ca.
2SK1643 : .
2SK1645 : Ordering number : ENN*0000 2SK1645 N-Channel Ga As MESFET 2SK1645 For C to X-band Local Oscillator and Amplifier Preliminary Features • • • Package Dimensions unit : mm 2134A [2SK1645] 1.9 0.95 0.95 0.4 4 3 0 to 0.1 • Lowest phase noise. Super miniaturized plastic-mold package (CP4). The chip surface is covered with the highly reliable protection film. Automatic surface mounting is available. 0.5 0.16 1 2 0.95 0.85 2.9 0.5 0.6 1.5 2.5 0.8 1 : Gate 2 : Source 3 : Drain 4 : Source 1.1 SANYO : CP4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Allowable Power Dissipation Junction Temperature Storage Tem.
2SK1646 : Ordering number : ENN7546 2SK1646 N-Channel GaAs MESFET 2SK1646 For C to X-band Local Oscillator and Amplifier Features • Package Dimensions unit : mm 2134A [2SK1646] 1.9 0.95 0.95 0.4 • • • Ideal for use in C to X-band local oscillator and amplifier. The chip surface is covered with the highly reliable protection film. Super miniaturized plastic-mold package (CP4). Automatic surface mounting is available. 0.5 0.16 0 to 0.1 4 3 1.5 2.5 1 2 0.95 0.85 2.9 0.5 0.6 0.8 1 : Gate 2 : Source 3 : Drain 4 : Source 1.1 SANYO : CP4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Allowable Power Dissipation Junc.
2SK1647L : 2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1647(L), 2SK1647(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 2.
2SK1647S : 2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1647(L), 2SK1647(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 2.
2SK1649 : ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed high current switching applications ·DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a .