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2SK1647S

Hitachi Semiconductor
Part Number 2SK1647S
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resi...
Datasheet PDF File 2SK1647S PDF File

2SK1647S
2SK1647S

Overview
2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK1647(L), 2SK1647(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 2 6 2 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1647(L), 2SK1647(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 900 ±30 — — 2.
0 — 0.
9 — — — — — — — — — Typ — — — — — 5.
0 1.
5 425 175 85 10 35 60 50 0.
9 700 Max — — ±10 250 3.
0 7.
0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0, diF/dt = 100 A/µs I D = 1 A, VGS = 10 V, RL = 30 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 1 A, VGS = 10 V *1 I D = 1 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1338.
3 2SK1647(L), 2SK1647(S) Power vs.
Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 ...


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