2SK3017

2SK301 : .

2SK3012 : SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3012 (F16W60VX2) 600V 12A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P E-pack Case (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION ●Switching power supply of AC 100-200V input ●Inverter ●Power Factor Control Circuit RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Tstg Storage Temperature Channel Temperature Tch VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain Current（DC） ID IDP Continuous Drain Current（Peak) IS Continuous Source Cur.

2SK3013 : SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3013 (FP16W60VX2) 600V 16A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case Case :: E-pack ITO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION ●Switching power supply of AC 100-200V input ●Inverter ●Power Factor Control Circuit RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current（DC） IDP Continuous Drain Current（Peak) Continuous Source Curre.

2SK3018 : Transistor 2.5V Drive Nch MOS FET 2SK3018 2SK3018 zStructure Silicon N-channel MOSFET zApplications Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. zExternal dimensions (Unit : mm) UMT3 2.0 0.3 (3) 0.9 0.2 0.7 1.25 2.1 0.1Min. (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : KN zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SK3018 Taping T106 3000 zEquivalent circuit Drain Gate zAbsolute maximum ratings (Ta=25°.

2SK3018 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX  8Ω@4V  13Ω@2.5V   ID 100mA SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel MARKING APPLICATION z Interfacing , Switching Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol VDS VGS ID Parameter Drain-Source voltage Gate-Source Voltage Continuous Drain Current PD Power Dissipation TJ Junction Temperature Tstg RθJA Storage Temperature Thermal Resistance .

2SK3018 : SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,,,。 Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applications ，。 Interfacing, switching. / Equivalent Circuit / Pinning 3 2 1 PIN1：S PIN 2：G PIN 3：D / Marking Marking KL http://www.fsbrec.com 1/6 2SK3018 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Drain Current- Pulsed Reverse Drain Current – Continuous Reverse Drain Current –Pulsed Total Power Dissipation Channel Temperature Storage Temperature Range *1:Pw≤10μs, Duty cycle≤50% *2:Wit.

2SK3018 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SK3018 Features • Low ON-Resistance • Low Input Capacitance • Low Voltage drive makes this device idipmenteal for portable equipment • Fast Switching Speed • Easily Designed Drive Circuits • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Mechanical Data • Halogen free available upon request by adding suffix "-HF" • Case: SOT-323, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking: KN N-Channel Enhancement Mode Field Effect Transistor SOT-323 A D D BC G.

2SK3018 : Production specification N-Channel Enhancement Mode Field Effect Transistor 2SK3018 FEATURES z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel. Pb Lead-free APPLICATIONS z Interfacing,switching (30V,100mA) ORDERING INFORMATION Type No. Marking 2SK3018 KN SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDP*1 IDR IDRP*1 PD*2 Gate -Source voltage ±20 drain current Reverse drain current Continuous 100 Pulsed 200 Continuous 100 Pulsed 200 Total Power Dissipation.

2SK3018 : SMD Type N-Channel MOSFET MOSFET 2SK3018 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ¡ñ Fast switching speed. ¡ñ Silicon N-channel MOSFET ¡ñ Drive circuits can be simple. Gate 0.55 ¡ñ Low on-resistance. Drain +0.1 1.3-0.1 ¡ö Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate ∗ Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source Protection Diode 3. Drain 3.collector Source ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Symbol VDSS VGSS ID IDP*1 PD *2 Rth(ch-a) * Tch Tstg 2 Rating 30 ¡À20 Unit V V mA mW ¡æ /W ¡æ ¡æ Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel to ambient Channel T.

2SK3018 : 2SK3018 N-Channel Enhancement Mode MOSFET • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • External dimensions • Applications Interfacing, switching (30V, 100mA) Units:mm • Structure Silicon N-channel MOSFET SOT-23 SOT-323 . Gate . Source . Drain • Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse current drain Continuous Pulsed Continuous Pulsed • Equivalent circuit Limits 30 20 100 200 100 200 200 150 -55~+150 Unit V V mA mA mA mA mW °C °C *Gate Protection Diode Symbol VDSS VGSS I.

2SK3018S3 : • Low voltage drive(2V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package Symbol 2SK3018S3 G G：Gate S：Source D：Drain S Outline SOT-323 D GS Ordering Information Device 2SK3018S3-0-T1-G Package SOT-323 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name 2SK3018S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C800S3 Issued Date : 20.

2SK3018W : SOT-323 N MOS 。N-Channel MOSFET in a SOT-323 Plastic Package. / Features ,,,。 Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applications ，。 Interfacing, switching. / Equivalent Circuit / Pinning 3 21 PIN1：S PIN 2：G PIN 3：D / Marking Marking KN http://www.fsbrec.com 1/6 2SK3018W Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Drain Current– Pulsed Reverse drain current–Continuous Reverse drain current– Pulsed Total power dissipation (Tc=25℃) Channel Temperature Storage Temperature Range *1:Pw≤10μs, Duty cycle≤50.

2SK3018W : * Low on-resistance. * Fast switching speed. GATE *Gate Protection Diode 2 SOURCE * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features: * Simple Drive Requirement * Small Package Outline 2SK3018W 3 1 2 SOT-323(SC-70) Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C Pulsed Drain Current (tp ≤ 10µS) VDS VGS ID IDM 30 ±20 100 400 Power Dissipation (TA=25°C)* PD 200 Operating Junction Temperature Range TJ +150 Storage Temperature Range Tstg -55 to +150 * With each pin mounted on the recomm.

2SK3019 : Transistor 2.5V Drive Nch MOS FET 2SK3019 2SK3019 zStructure Silicon N-channel MOSFET zApplications Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SK3019 Taping TL 3000 0.8 1.6 0.1Min. zDimensions (Unit : mm) EMT3 1.6 0.3 (3) 0.7 0.55 (1)Source (2)Gate (3)Drain (2) (1) 0.2 0.2 0.5 0.5 1.0 0.15 Abbreviated symbol : KN zEquivalent circuit Gate Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage.

2SK3019 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX  8Ω@4V  13Ω@2.5V   ID 100mA SOT-523 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel MARKING APPLICATION z Interfacing , Switching Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current RθJA Thermal Resistance, Junction-to-Ambient PD Power Dissipation TJ Junction Temperature .

2SK3019 : SMD Type N-Channel MOSFET 2SK3019 ■ Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel. Gate Drain Gate Protection Diode Source MOSFET 1 Gate 2 Source 3 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current Pulsed *1 IDP Power Dissipation *2 PD Junction Temperature Storage Temperature Range TJ Tstg *1 Pw≤10μs, Duty cycle≤1% *2 With each pin mounted on the recommended lands. ■ Electrical Characteristics Ta = 25℃ Rating 30 ±20 ±100 ±4.