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2SK3018

Part Number	2SK3018
Manufacturer	JinYu
Description	N-Channel Enhancement Mode MOSFET
Published	Oct 29, 2014
Detailed Description	2SK3018 N-Channel Enhancement Mode MOSFET • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage driv...
Datasheet	2SK3018 PDF File

Overview

2SK3018 N-Channel Enhancement Mode MOSFET • Features 1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.
5V) makes this device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
• External dimensions • Applications Interfacing, switching (30V, 100mA) Units:mm • Structure Silicon N-channel MOSFET SOT-23 SOT-323 .
Gate .
Source .
Drain • Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse current drain Continuous Pulsed Continuous Pulsed • Equivalent circuit Limits 30 20 100 200 100 200 200 150 -55~+150 Unit V V mA mA mA mA mW °C °C *Gate Protection Diode Symbol VDSS VGSS ID IDP*1 IDR IDRP*1 PD*2 Tch Tstg Drain Gate Total power dissipation(Tc=25°C) Channel temperature Storage temperature Source *1Pw 10µs,Duty Cycle *2With each pin mounted on the recommended lands *A protection diode is included between the gate and the source terminals to protect the diode again...

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