2SK304

2SK300 : www.DataSheet4U.com .

2SK3000 : 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st. Edition December 1997 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °.

2SK3000 : 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features www.DataSheet4U.com R • Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 1 1. Source 2. Gate 3. Drain 2 S Note: Marking is “ZY–”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °C Channel dissipation Pch .

2SK3001 : 2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) • Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor. CAUTION This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be th.

2SK3003 : 2SK3003 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 200 V VGSS ±20 V ID ±18 A * ID (pulse) 1 ±72 A PD 35 (Tc = 25ºC) W EAS *2 120 mJ IAS 18 A Tch 150 ºC Tstg –55 to +150 ºC * 1: PW 100µs, duty cycle 1% * 2: VDD = 25V, L = 650µH, IL = 18A, unclamped, RG = 50Ω, See Figure 1 on Page 5. Electrical Characteristics Symbol Ratings min typ V(BR) DSS 200 I GSS I DSS VTH 2.0 Re (yfs) 7 11 RDS (on) 130 Ciss 850 Coss 550 Crss 250 t d (on) 20 tr 50 td (off) 65 tf 80 VSD 1.0 t rr 500 max ±100 100 4.0 175 1.5 (Ta = 25ºC) Unit Conditions V ID = 100µA, VGS = 0V nA VGS = ±20V µA VDS.

2SK3003 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.57 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif.

2SK3004 : 2SK3004 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 250 V VGSS ±20 V ID ±18 A * ID (pulse) 1 ±72 A PD 35 (Tc = 25ºC) W EAS *2 120 mJ IAS 18 A Tch 150 ºC Tstg –55 to +150 ºC * 1: PW 100µs, duty cycle 1% * 2: VDD = 25V, L = 670µH, IL = 18A, unclamped, RG = 50Ω, See Figure 1 on Page 5. Electrical Characteristics Symbol Ratings min typ V(BR) DSS 250 I GSS I DSS VTH 2.0 Re (yfs) 7 11 RDS (on) 200 Ciss 850 Coss 550 Crss 250 td (on) 20 tr 50 td (off ) 65 tf 80 VSD 1.0 t rr 700 max ±100 100 4.0 250 1.5 (Ta = 25ºC) Unit Conditions V ID = 100µA, VGS = 0V nA VGS = ±20V µA VDS.

2SK3004 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.57 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif.

2SK3009 : SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3009 (F8S60VX2) 600V 8A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. •œ Avalanche resistance guaranteed. APPLICATION •œ Switching power supply of OUTLINE DIMENSIONS Case : E-pack Case : STO-220 (Unit : mm) AC 100-200V input •œ Inverter •œ Power Factor Control Circuit RATINGS •œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current• DC•j i ID Continuous Drain Current• Peak) i .

2SK301 : .

2SK3012 : SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3012 (F16W60VX2) 600V 12A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P E-pack Case (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION ●Switching power supply of AC 100-200V input ●Inverter ●Power Factor Control Circuit RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Tstg Storage Temperature Channel Temperature Tch VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain Current（DC） ID IDP Continuous Drain Current（Peak) IS Continuous Source Cur.

2SK3013 : SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3013 (FP16W60VX2) 600V 16A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case Case :: E-pack ITO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION ●Switching power supply of AC 100-200V input ●Inverter ●Power Factor Control Circuit RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current（DC） IDP Continuous Drain Current（Peak) Continuous Source Curre.

2SK3017 : 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitiv.

2SK3018 : Transistor 2.5V Drive Nch MOS FET 2SK3018 2SK3018 zStructure Silicon N-channel MOSFET zApplications Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. zExternal dimensions (Unit : mm) UMT3 2.0 0.3 (3) 0.9 0.2 0.7 1.25 2.1 0.1Min. (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : KN zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SK3018 Taping T106 3000 zEquivalent circuit Drain Gate zAbsolute maximum ratings (Ta=25°.

2SK3018 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX  8Ω@4V  13Ω@2.5V   ID 100mA SOT-323 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel MARKING APPLICATION z Interfacing , Switching Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol VDS VGS ID Parameter Drain-Source voltage Gate-Source Voltage Continuous Drain Current PD Power Dissipation TJ Junction Temperature Tstg RθJA Storage Temperature Thermal Resistance .

2SK3018 : SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,,,。 Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applications ，。 Interfacing, switching. / Equivalent Circuit / Pinning 3 2 1 PIN1：S PIN 2：G PIN 3：D / Marking Marking KL http://www.fsbrec.com 1/6 2SK3018 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Drain Current- Pulsed Reverse Drain Current – Continuous Reverse Drain Current –Pulsed Total Power Dissipation Channel Temperature Storage Temperature Range *1:Pw≤10μs, Duty cycle≤50% *2:Wit.

2SK3018 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SK3018 Features • Low ON-Resistance • Low Input Capacitance • Low Voltage drive makes this device idipmenteal for portable equipment • Fast Switching Speed • Easily Designed Drive Circuits • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Mechanical Data • Halogen free available upon request by adding suffix "-HF" • Case: SOT-323, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking: KN N-Channel Enhancement Mode Field Effect Transistor SOT-323 A D D BC G.