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2SK3000

Hitachi Semiconductor
Part Number 2SK3000
Manufacturer Hitachi Semiconductor
Description Silicon N Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st. Edition December 1997 Features • L...
Datasheet PDF File 2SK3000 PDF File

2SK3000
2SK3000


Overview
2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st.
Edition December 1997 Features • Low on-resistance R DS(on) = 0.
25Ω typ.
(V GS = 10 V, ID = 450 mA) • 4V gate drive devices.
• Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1.
Source 2.
Gate 3.
Drain S 1 2SK3000 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 40 ±10 1.
0 4.
0 1.
0 400 150 –55 to +150 Unit V V A A A mW °C °C 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
When using the glass epoxy board (10 mm x 10 mm x 1 mmt ) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Drain to source voltage Gate to source breakdown voltage Symbol V(BR)DSS VDS(SUS) V(BR)GSS Min 40 40 ±10 — — 1.
1 — Typ — — — — — — 0.
3 Max 60 — — 1.
0 ±5 2.
1 0.
5 Unit V V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test Conditions I D = 100µA, VGS = 0 L = 100µH, I D = 3 A I G = ±100µA, VDS = 0 VDS = 40 V, VGS = 0 VGS = ±6.
5V, VDS = 0 I D = 10µA, VDS = 5V I D = 450 mA VGS = 4V Note3 — 0.
5 — — — — — — — 0.
25 1.
2 14.
0 68 3.
0 0.
12 0.
6 1.
7 1.
4 0.
3 — — — — — — — — I D = 450 mA VGS = 10V Note3 I D = 450 mA VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, I D = 450 mA RL = 22Ω Zero gate voltege drain current I DSS Gate to source leak current I GSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3.
Pulse test 4.
Marking is “ZY”.
t d(on) tr t d(off) tf 2 2SK3000 Main Characteristics Power vs.
Temperature Derating 0.
8 Maximum Safe Operation Area 50 µs...



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