| Part Number | 2SC5085 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN Transistor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 2SC5085 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain... |
| Features |
ok (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics Transition frequency Ins...
|
| File Size | 501.68KB |
| Datasheet |
|
2SC508 : ·With TO-66 package ·High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ·For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 180 60 6 4 25 150 -65~200 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2SC508.
2SC508 : ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 60 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 6 V 4 A 25 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 5.0 ℃/W isc website：www.iscsemi.com 1 isc & isc.
2SC5080 : 2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current .
2SC5081 : 2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current S.
2SC5084 : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 2SC5084 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V 3 V 40 mA 80 mA 150 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, e.
2SC5084 : ·High Gain Bandwidth Product fT = 7 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 80 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 40 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc websit.
2SC5086 : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 2SC5086 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V 3 V 40 mA 80 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, .
2SC5086 : ·Low Noise NF = 1.1dB TYP. @ f = 1GHz ·High Gain ︱S21e︱2= 11dB TYP. @ f = 1GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3V IC Collector Current-Continuous 80 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 40 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5086 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci.
2SC5086FT : .
2SC5087 : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 12 V 3 V 40 mA 80 mA 150 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, .
2SC5088 : 2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications • • Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 12 3 40 80 100 125 −55~125 Unit V V V mA mA mW °C °C USQ 1.Emitter1 2.Collector 3.Emitter2 4.Base Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the signi.
2SC5089 : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 2SC5089 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature.
2SC5089 : ·High Gain Bandwidth Product fT = 10 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 40 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc web.