DatasheetsPDF.com

2SC5088

Toshiba Semiconductor
Part Number 2SC5088
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications • • ...
Datasheet PDF File 2SC5088 PDF File

2SC5088
2SC5088

Overview
2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications • • Low noise figure, high gain.
NF = 1.
1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 12 3 40 80 100 125 −55~125 Unit V V V mA mA mW °C °C USQ 1.
Emitter1 2.
Collector 3.
Emitter2 4.
Base Note: Using continuously under heavy loads (e.
g.
the application of JEDEC ― high temperature/current/voltage and the significant change in JEITA ― temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
TOSHIBA 2-2K1A operating temperature/current/voltage, etc.
) are within the Weight: 0.
006 g (typ.
) absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Symbol fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) NF (1) NF (2) 2 2 Test Condition VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min 5 ⎯ 9.
5 ⎯ ⎯ Typ.
7 18 13 1 1.
1 Max ⎯ ⎯ ⎯ ⎯ 2 Unit GHz dB Noise figure dB www.
DataSheet4U.
com 1 2007-11-01 2SC5088 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance Symbol ICBO IEBO hFE (Note 1) Cob Cre Test Condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note 2) M...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)