| Part Number | 2SC5405 |
| Manufacturer | Panasonic Semiconductor |
| Title | NPN TRANSISTOR |
| Description | Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm s Feat... |
| Features |
q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
q
High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: 5kV (TC=25˚C)
Ratings 80 50 6 6 3 1 20 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2... |
| File Size | 37.29KB |
| Datasheet |
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2SC5404 : 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 3 V (Max.) l High Speed : tf = 0.15 µs (Typ.) l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 9 18 4.5 50 150 −55~150 UNIT V V.
2SC5404 : ·With TO-3P(H)IS package www.datasheet4u.com ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5404 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 9 18 4.5 50 150 -55~1.
2SC5404 : ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal output applications for medium resolution display & color TV. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 9 A ICM Collector Current- Continuous 18 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.5 A 50 W 150 ℃ Tstg S.
2SC5406 : Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 14 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temp.
2SC5406A : Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 14 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temp.
2SC5407 : Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 20 15 8 100 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature St.
2SC5407 : ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current- Peak 20 A IB Base Current- Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8 A 100 W .
2SC5408 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package PACKAGE DIMENSIONS (in mm) 2.1±0.1 1.25±0.1 0.2 +0.1 –0 0.15 +0.1 –0 1.3 0.65 0.65 2.0±0.2 E ORDERING INFORMATION PART NUMBER 2SC5408-T1 QUANTITY 3 kpcs/reel PACKING STYLE 8-mm wide emboss taping, 6-pin (collector) feed hole direction 0.9±0.1 B 0.7 Remark To order evaluation samples, consult your NEC sales personnel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS P.
2SC5409 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 16 GHz TYP. • High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA • 6-pin Small Mini Mold Package PACKAGE DIMENSIONS (in mm) 2.1±0.1 1.25±0.1 0.2 +0.1 –0 0.15 +0.1 –0 1.3 0.65 0.65 2.0±0.2 E ORDERING INFORMATION PART NUMBER 2SC5409-T1 QUANTITY 3 kpcs/reel PACKING STYLE 8-mm wide emboss taping, 6-pin (collector) feed hole direction 0.9±0.1 B 0.7 Remark To order evaluation samples, consult your NEC sales personnel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS PA.