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2SC5408

NEC
Part Number 2SC5408
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATI...
Datasheet PDF File 2SC5408 PDF File

2SC5408
2SC5408

Overview
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 17 GHz TYP.
• High gain |S21e|2 = 15.
5 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.
1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package PACKAGE DIMENSIONS (in mm) 2.
1±0.
1 1.
25±0.
1 0.
2 +0.
1 –0 0.
15 +0.
1 –0 1.
3 0.
65 0.
65 2.
0±0.
2 E ORDERING INFORMATION PART NUMBER 2SC5408-T1 QUANTITY 3 kpcs/reel PACKING STYLE 8-mm wide emboss taping, 6-pin (collector) feed hole direction 0.
9±0.
1 B 0.
7 Remark To order evaluation samples, consult your NEC sales personnel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 5 3 2 10 30 150 –65 to +150 UNIT V V V mA mW °C °C E: Emitter C: Collector B: Base Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
Document No.
P12095EJ1V0DS00 (1st edition) Date Published April 1997 N Printed in Japan 0 to 0.
1 © E E C E T1E 1997 2SC5408 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e| NF 2 TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 7 mA Note 1 VCE = 2 V, IC = 7 mA, f = 2.
0 GHz VCB = 2 V, IE = 0, f = 1 MHz Note 2 VCE = 2 V, IC = 7 mA, f = 2.
0 GHz VCE = 2 V, IC = 1 mA, f = 2.
0 GHz MIN.
TYP.
MAX.
0.
1 0.
1 UNIT µA µA 70 17 0.
1 13 15.
5 1.
1 140 GHz 0.
15 pF dB 1.
8 dB Rank Marking hFE T1E FB 70 to 40 Notes 1.
Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %, pulsed 2.
Measured with three-pin bridge, with emitter pin connected to the bridge guard.
TYPICAL CHARACTERISTICS (TA = 25 °C) TO...


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