2SC5434

2SC5431 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5004 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 12 3 60 100 125 –65 to +125 UNIT V V TA 3 1 0.59 ± 0.05 V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Colle.

2SC5432 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5006 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 12 3 100 125 150 –65 to +150 UNIT V V TC 3 1 0.59 ± 0.05 V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = .

2SC5433 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5007 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 10 1.5 65 125 150 –65 to +150 UNIT V V TE 3 1 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER.

2SC5435 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5010 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 30 125 150 –65 to +150 UNIT V V TK 3 1 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Col.

2SC5436 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5186 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 5 3 2 30 90 150 –65 to +150 UNIT V V TN 3 1 mW °C °C ELECTRICAL CHARACTERISTICS (TA =.

2SC5437 : PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5195 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 1.4 ± 0.1 (0.9) 0.45 0.45 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 125 150 –65 to +150 UNIT V V TS 3 1 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Co.

2SC5439 : TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications 2SC5439 Unit: mm • Excellent switching times: tr = 0.2 μs (typ.), tf = 0.15 μs (typ.) • High collector breakdown voltage: VCEO = 450 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 1000 450 9 8 16 1 2.0 30 150 −55 to 150 V V.

2SC5439 : ·With TO-220F package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator applications ·High voltage switching applications ·DC-DC converter applications ·Inverter lighting applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 1000 450 .

2SC5439 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications. ·High voltage switching applications. ·DC-DC converter applications. ·Inverter lighting applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature .