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2SC5439

Part Number	2SC5439
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High Switchin...
Datasheet	2SC5439 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications.
·High voltage switching applications.
·DC-DC converter applications.
·Inverter lighting applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power ...

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