| Part Number | 2SD1261A |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN triple diffusion Transistor |
| Description | Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and... |
| Features |
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB938 2SB938A 2SB938 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter...
|
| File Size | 64.87KB |
| Datasheet |
|
2SD1261 : Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 5 8 4 40 1.3 150 –55 to +150 Unit V 1.5±0.1 s Features 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1261 2SD1261A 2SD1261 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3.
2SD1261 : Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 5 8 4 40 1.3 150 –55 to +150 Unit V 1.5±0.1 s Features 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1261 2SD1261A 2SD1261 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3.
2SD1261A : Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 1.3 150 –55 to +150 Unit V 1.5±0.1 s Features 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB938 2SB938A 2SB938 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.0.