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2SD1261

Part Number	2SD1261
Manufacturer	Panasonic Semiconductor
Description	Silicon PNP Transistor
Published	Apr 3, 2005
Detailed Description	Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington For power amplification Complem...
Datasheet	2SD1261 PDF File

Overview

Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A 10.
0±0.
3 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 60 80 60 80 5 8 4 40 1.
3 150 –55 to +150 Unit V 1.
5±0.
1 s Features 1.
5max.
10.
5min.
2.
0 1.
1max.
0.
8±0.
1 0.
5max.
s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1261 2SD1261A 2SD1261 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.
54±0.
3 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 emitter voltage 2SD1261A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.
0±0.
3 6.
0±0.
3 V A A W 1.
5–0.
4 2.
0 ...

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