2SD1867

2SD186 : .

2SD1861 : Transistors Power transistor (40V, 2A) 2SD1759 / 2SD1861 2SD1759 / 2SD1861 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239. zEquivalent circuit C B RBE 4kΩ C : Collector B : Base E : Emitter E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1861 2SD1759 Symbol VCBO VCER VEBO IC PC Junction temperature Tj Storage temperature Tstg ∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Limits 40 40 5 2 1∗ 1 10 150 −55 to +150 Unit V V(RBE=10kΩ.

2SD1862 : Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 Structure Epitaxial planar type NPN silicon transistor 0.5±0.1 Dimensions (Unit : mm) 2SD1766 4.5+−00..21 1.6±0.1 1.5 +0.2 −0.1 2SD1758 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 4.0±0.3 2.5+−00..21 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4 +0.1 −0.05 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD1862 6.8±0.2 2.5±0.2 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2.

2SD1862 : TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features , 2SB1240 。 Low VCE(sat),complementary to 2SB1240. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 120～270 R 180～390 http://www.fsbrec.com 1/6 2SD1862 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC .

2SD1863 : Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.5±0.2 5.1+−00..21 C0.5 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 Abbreviated symbol : DF 2SD1768S 2.3+−00..21 0.5±0.1 3±0.2 4±0.2 (1) Base (2) Collector (3) Emitter 2±0.2 3Min. 5.5+−00..31 1.5±0.3 0.9 (15Min.) 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1.

2SD1864 : Power Transistor (50V, 3A) 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1864 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current 3 A (DC) IC 4.5 A (Pulse) ∗1 Collector power dissipation PC 1 W ∗2 Junction temperature Tj 150 °C Storage temperature .

2SD1864 : Power Transistor FEATURES z Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) z Complements the 2SB1184. APPLICATIONS z Epitaxial planar type. z NPN silicon transistor. Pb Lead-free Production specification 2SD1864 TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 3A ICP Collector Current(Pulse) 4.5 A IB Base Current 1A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V040 Rev.A www.gmicroelec.com 1 Production specification Powe.

2SD1864 : TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ， 2SB1243 。 Low VCE(sat),complementary pair with 2SB1243. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 R 180～390 http://www.fsbrec.com 1/6 2SD1864 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VC.

2SD1865 : Transistors 2SD1834 2SD1468S / 2SD1865 (94S-340-D64) (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upo.

2SD1866 : 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. !External dimensions (Units : mm) 2SD2212 1.5 0.4 4.0 1.0 2.5 0.5 (1) 3.0 0.5 (3) 1.5 0.4 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD2212 2SD2.

2SD1868 : 2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA1868 160 160 5 100 0.9 150 –55 to +150 2SA1869 200 200 5 100 0.9 150 –55 to +150 Unit V V V mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol 2SD1868 V(BR)CBO 2SD1869 Collector to emitter breakdown voltage 2SD1868 V(BR)CEO 2SD1869 Emitter t.

2SD1869 : 2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA1868 160 160 5 100 0.9 150 –55 to +150 2SA1869 200 200 5 100 0.9 150 –55 to +150 Unit V V V mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol 2SD1868 V(BR)CBO 2SD1869 Collector to emitter breakdown voltage 2SD1868 V(BR)CEO 2SD1869 Emitter t.