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2SD1863

Rohm
Part Number 2SD1863
Manufacturer Rohm
Description Power Transistor
Published Apr 3, 2005
Detailed Description Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (D...
Datasheet PDF File 2SD1863 PDF File

2SD1863
2SD1863

Overview
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.
5+−00.
.
21 1.
6±0.
1 1.
5−+00.
.
12 0.
5±0.
1 4.
0±0.
3 2.
5+−00.
.
21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.
5±0.
2 5.
1+−00.
.
21 C0.
5 1.
0±0.
2 (1) (2) (3) 0.
4±0.
1 1.
5±0.
1 0.
5±0.
1 3.
0±0.
2 0.
4±0.
1 1.
5±0.
1 0.
4−+00.
.
015 Abbreviated symbol : DF 2SD1768S 2.
3+−00.
.
21 0.
5±0.
1 3±0.
2 4±0.
2 (1) Base (2) Collector (3) Emitter 2±0.
2 3Min.
5.
5+−00.
.
31 1.
5±0.
3 0.
9 (15Min.
) 1.
5 2.
5 9.
5±0.
5 0.
75 0.
9 0.
65±0.
1 2.
3±0.
2 2.
3±0.
2 (1) (2) (3) 0.
55±0.
1 1.
0±0.
2 ROHM : CPT3 EIAJ : SC-63 2SD1863 6.
8±0.
2 (1) Base (2) Collector (3) Emitter 2.
5±0.
2 0.
45+−00.
.
1055 2.
5+−00.
.
41 5 0.
5 0.
45−+00.
.
0155 (1) (2) (3) Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 4.
4±0.
2 1.
0 0.
9 0.
65Max.
14.
5±0.
5 0.
5±0.
1 (1) (2) (3) 2.
54 2.
54 1.
05 0.
45±0.
1 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base www.
rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/3 2009.
12 - Rev.
C 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO 120 Collector-emitter voltage VCEO 80 Emitter-base voltage VEBO 5 Collector current 1 IC 2 2SD1898 0.
5 2 Collector power dissipation 2SD1733 PC 1 10 2SD1768S 0.
3 2SD1863 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.
7mm thick, collector copper plating 1cm2 or larger.
∗3 When mounted on a 40×40×0.
7mm ceramic board.
Unit V V V A (DC) A (Pulse) ∗1 W W ∗3 W W (Tc=25°C) W W ∗2 °C °C Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Col...


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