DU28200

DU2820 : --= --=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices DU2820S Absolute Maximum Ratings at 25°C Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 1 Symbol V 0s V GS 4,s p rJ TJ T STG 6JC 1 Rating 65 20 24 62.5 200 -55 to +150 2.8 t Units V V A W “C “C “Cl-W 1 J 1 4.04 1 4.55 7.39 [ I X59 .259 1 I .l79 291 I 1 K L 1 6.58 1 .I0 1 1 x5 1 404 1 Jo6 Electrical Characteristics I Parameter Dra.

DU28200M : an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65 20 20 I v V A I 1 P, TJ T STG / 389 200 -65 to +150 1 W “C “C 1 Electrical Characteristics Parameter at 25°C Test Conditions Drain-Source Breakdown Voltage Drain-Source Leakage Current G.

DU28200M : DU28200M RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 20 389 200 -65 to +150 0.45 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 2.7 - j4.8 7.2 - j1.9 100 1.6 - j3.0 5.25 - j1.4 150 1.5 - j2.0 5.0 - j0.7 175 1.

DU2820S : --= --=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices DU2820S Absolute Maximum Ratings at 25°C Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 1 Symbol V 0s V GS 4,s p rJ TJ T STG 6JC 1 Rating 65 20 24 62.5 200 -55 to +150 2.8 t Units V V A W “C “C “Cl-W 1 J 1 4.04 1 4.55 7.39 [ I X59 .259 1 I .l79 291 I 1 K L 1 6.58 1 .I0 1 1 x5 1 404 1 Jo6 Electrical Characteristics I Parameter Dra.

DU2820S : DU2820S RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 24 62.5 200 -55 to +150 2.8 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 17.5 - j13.0 ZLOAD (Ω) 16.0 - j2.5 50 15.0 - j15.5 15.0 - j4.0 100 8.0 - j14.0 12.0 - j6.0 200 .