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DU28200M

Part Number	DU28200M
Manufacturer	MA-COM
Description	RF Power MOSFET Transistor
Published	Aug 21, 2017
Detailed Description	DU28200M RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS struc...
Datasheet	DU28200M PDF File

Overview

DU28200M RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 20 389 200 -65 to +150 0.
45 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 2.
7 - j4.
8 7.
2 - j1.
9 100 1.
6 - j3.
0 5.
25 - j1.
4 150 1.
5 - j2.
0 5.
0 - j0.
7 175 1...

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