DU2880V

DU2880 : an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O.O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo.o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, V,,=O.O V v, v,,=o.o v Test Conditions Leakage Current LeakageCurrent ‘DSS ‘GSS V GSITHI GM C ISS C as.

DU2880 : an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O.O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo.o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, V,,=O.O V v, v,,=o.o v Test Conditions Leakage Current LeakageCurrent ‘DSS ‘GSS V GSITHI GM C ISS C as.

DU2880T : an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O.O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo.o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, V,,=O.O V v, v,,=o.o v Test Conditions Leakage Current LeakageCurrent ‘DSS ‘GSS V GSITHI GM C ISS C as.

DU2880T : DU2880T RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V Features  N- channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 16 206 200 -65 to +150 0.85 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 5.4 - j4.4 5.7 +j4.7 50 2.5 - j4.4 3.4 + j3.5 100 1.6 - j3.4 2.4 + j2.4 175 0.7 - .

DU2880U : RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880U Absolute Maximum Ratings at 25°C 1U Speciftcations Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 w Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 8OW, 28V DU2880U v2.00 Typical Broadband Performance Curves EFFICIENCY I’,,=28 vs FREQUENCY 25 GAIN vs FREQUENCY V I,,=400 mA P,,,=80 W .” 25 50 1.

DU2880U : DU2880U RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 16 206 200 -65 to +150 0.85 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 5.4 - j4.4 5.7 +j4.7 50 2.5 - j4.4 3.4 + j3.5 100 1.6 - j3.4 2.4 + j2.4 175 0.7 - .

DU2880V : DU2880V RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than competitive devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage VDS 65 Gate-Source Voltage VGS 20 Drain-Source Current Power Dissipation IDS PD 8* 206 Junction Temperature Storage Temperature Thermal Resistance TJ TSTG θJC 200 -55 to +150 0.85 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 4.5 - j14.5 13.5 +j4.5 100 3.0 - j10.5 13.5 + j6.0 175 2.0 - j7.5 12.0 .