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DU2880V

MA-COM
Part Number DU2880V
Manufacturer MA-COM
Description RF Power MOSFET Transistor
Published Aug 21, 2017
Detailed Description DU2880V RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structu...
Datasheet PDF File DU2880V PDF File

DU2880V
DU2880V

Overview
DU2880V RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than competitive devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage VDS 65 Gate-Source Voltage VGS 20 Drain-Source Current Power Dissipation IDS PD 8* 206 Junction Temperature Storage Temperature Thermal Resistance TJ TSTG θJC 200 -55 to +150 0.
85 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 4.
5 - j14.
5 13.
5 +j4.
5 100 3.
0 - j10.
5 13.
5 + j6.
0 175 2.
0 - j7.
5 12.
0 ...


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