SMBT3906U

SMBT3906 : PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3906S/ U: for orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 SMBT3906...MMBT3906 Type SMBT3906/ MMBT3906 SMBT3906S SMBT3906U Marking Pin Configuration Package s2A 1=B 2=E 3=C - - - SOT23 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltag.

SMBT3906DW1 : MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low −power surface mount applications where board space is at a premium. Features http://onsemi.com • • • • • • • • hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel S Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang.

SMBT3906S : SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN) 4 5 6 2 1 3 VPS05604 Type SMBT 3906S Marking Ordering Code s2A Q62702-A1202 Pin Configuration Package 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 40 40 6 200 250 150 - 6.

SMBT3906S : PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3906S/ U: for orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 SMBT3906...MMBT3906 Type SMBT3906/ MMBT3906 SMBT3906S SMBT3906U Marking Pin Configuration Package s2A 1=B 2=E 3=C - - - SOT23 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltag.