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SMBT3906

Infineon Technologies AG
Part Number SMBT3906
Manufacturer Infineon Technologies AG
Description PNP Silicon Switching Transistor
Published Apr 7, 2005
Detailed Description PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • ...
Datasheet PDF File SMBT3906 PDF File

SMBT3906
SMBT3906

Overview
PNP Silicon Switching Transistors • High DC current gain: 0.
1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904.
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MMBT3904 (NPN) • SMBT3906S/ U: for orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 SMBT3906.
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MMBT3906 Type SMBT3906/ MMBT3906 SMBT3906S SMBT3906U Marking Pin Configuration Package s2A 1=B 2=E 3=C - - - SOT23 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 71°C, SOT23, MMBT3906 TS ≤ 115°C, SOT363, MMBT3906S TS ≤ 107°C, SC74, MMBT3906U Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 6 200 330 250 330 150 -65 .
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150 ...


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