| Part Number | SMBT6428 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Transistors |
| Description | NPN Silicon Transistors SMBT 6428 SMBT 6429 For AF input stages and driver applications q High current gain q Low collector-emitter saturation v... |
| Features |
racteristics Collector-emitter breakdown voltage IC = 1 mA SMBT 6428 SMBT 6429 Collector-base breakdown voltage IC = 10 µA SMBT 6428 SMBT 6429 Emitter-base breakdown voltage IE = 1 µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C Collector cutoff current VCE = 30 V...
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| File Size | 176.71KB |
| Datasheet |
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SMBT6427 : NPN Silicon Darlington Transistor For general amplifier applications q High collector current q High current gain q SMBT 6427 Type SMBT 6427 Marking s1V Ordering Code (tape and reel) Q68000-A8320 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM Ptot Tj Tstg Values 40 40 12 500 800 360 150 – 65 + 150 Unit V mA mW ˚C 280 210 K/W 1) 2) For detailed inf.
SMBT6429 : NPN Silicon Transistors SMBT 6428 SMBT 6429 For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Type SMBT 6428 SMBT 6429 Marking s1K s1L Ordering Code (tape and reel) Q68000-A8321 Q68000-A8322 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values SMBT 6428 SMBT 6429 50 60 45 55 6 200 330 150 – 65 + 150 Unit V.