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SMBT6427

Siemens Semiconductor Group
Part Number SMBT6427
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Darlington Transistor
Published Apr 7, 2005
Detailed Description NPN Silicon Darlington Transistor For general amplifier applications q High collector current q High current gain q SMB...
Datasheet PDF File SMBT6427 PDF File

SMBT6427
SMBT6427

Overview
NPN Silicon Darlington Transistor For general amplifier applications q High collector current q High current gain q SMBT 6427 Type SMBT 6427 Marking s1V Ordering Code (tape and reel) Q68000-A8320 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM Ptot Tj Tstg Values 40 40 12 500 800 360 150 – 65 … + 150 Unit V mA mW ˚C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 SMBT 6427 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage, IE = 10 µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C Collector cutoff current VCE = 30 V, IB = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 0.
5 mA IC = 500 mA, IB = 0.
5 mA Base-emitter saturation voltage1) IC = 500 mA, IB = 0.
5 mA Base-emitter voltage IC = 50 mA, VCE = 5 V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.
5 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 5 V, RS = 100 kΩ f = 1 kHz to 15 kHz 1) Values typ.
max.
Unit V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 40 40 12 – – – – – – – – – – – – 50 10 1 50 V nA µA µA ICE0 IEB0 hFE – – nA – 10000 – 20000 – 14000 – VCEsat – – VBEsat VBE(on) – – – – – – 100000 200000 140000 V 1.
2 1.
5 ...


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