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RFL1N18

Part Number	RFL1N18
Manufacturer	Intersil Corporation
Title	1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs
Description	These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applica...
Features	• 1A, 180V and 200V • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer...
Published	Apr 16, 2005
Datasheet	RFL1N18 PDF File

RFL1N18
RFL1N18

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Features

• 1A, 180V and 200V
• rDS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface M...

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