| Part Number | PD8XX2 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | InGaAs AVALANCHE PHOTO DIODES |
| Description | MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8042,PD8932 FEATURES • Active diameter 50µm • Low • High • Very... |
| Features |
• Active diameter 50µm • Low • High • Very • High noise speed response small dark current quantum efficiency DISCRIPTION PD8XX2 is an InGaAs avalanche photodiode suitable for receiving the light having low noise, a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantu... |
| File Size | 167.04KB |
| Datasheet |
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PD8XX3 : PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light receiving element for long - distance optical communications. APPLICATION Receiber for long-distance fiber-optic communication systems ABSOLUTE MAXIMUM RATING Symbol IR IF TC Tstg Parameter Reverse current Forward current Case temperature Storage temperature Conditions Ratings 500 2 -40~+85 -40~+100 Unit µA mA ˚C ˚C ELECTRICAL /OPTICAL CHARACTERISTICS Symbol V(BR)R Ct ID η fc parameter Breakdown voltage Capa.