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PD8XX3

Mitsubishi Electric Semiconductor
Part Number PD8XX3
Manufacturer Mitsubishi Electric Semiconductor
Description InGaAs AVALANCHE PHOTO DIODES
Published Mar 22, 2005
Detailed Description MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 FEATURES • φ35 µ m active diamet...
Datasheet PDF File PD8XX3 PDF File

PD8XX3
PD8XX3

Overview
MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 FEATURES • φ35 µ m active diameter • Low noise • High speed response • Small dark current • High quantum efficiency DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.
This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light receiving element for long - distance optical communications.
APPLICATION Receiber for long-distance fiber-optic communication systems ABSOLUTE MAXIMUM RATING Symbol IR IF TC Tstg Parameter Rever...


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