| Part Number | PN2369 |
| Manufacturer | Philips |
| Title | NPN transistors |
| Description | NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, ha... |
| Features |
• Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching applications. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Si... |
| File Size | 45.46KB |
| Datasheet |
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PN2369 : MMBT2369 / PN2369 — NPN Switching Transistor MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. February 2008 MMBT2369 PN2369 C E B SOT-23 Mark: 1J TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25×C unless otherwise noted Symbol Parameter VCEO VCBO VEBO IC ICP TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous **Collector Current (Pulse) Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor .
PN2369A : PN2369A / MMBT2369A / MMPQ2369 Discrete POWER & Signal Technologies PN2369A MMBT2369A C MMPQ2369 B E B E B E B E E C BE TO-92 SOT-23 Mark: 1S B SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 40 4.5 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which th.
PN2369A : NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −55 − −55 MIN. MAX. 40 15.
PN2369A : The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM PD TJ, Tstg 40 40 15 4.5 200 500 350 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=20V ICBO VCB=20V, TA=125°C ICES VCE=20V (2N5769) IEBO VEB=4.5V (2N5769) BVCB.