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PN2369A

Fairchild Semiconductor
Part Number PN2369A
Manufacturer Fairchild Semiconductor
Description NPN Transistor
Published May 9, 2005
Detailed Description PN2369A / MMBT2369A / MMPQ2369 Discrete POWER & Signal Technologies PN2369A MMBT2369A C MMPQ2369 B E B E B E B E ...
Datasheet PDF File PN2369A PDF File

PN2369A
PN2369A

Overview
PN2369A / MMBT2369A / MMPQ2369 Discrete POWER & Signal Technologies PN2369A MMBT2369A C MMPQ2369 B E B E B E B E E C BE TO-92 SOT-23 Mark: 1S B SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA.
Sourced from Process 21.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 40 4.
5 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die PN2369A 350 2.
8 125 357 Max MMBT2369A* 225 1.
8 556 125 240 MMPQ2369 1,000 8.
0 Units mW mW/ °C °C/W °C/W °C/W °C/W *Device mounted on FR-4 PCB 1.
6" X 1.
6" X 0.
06.
" © 1997 Fairchild Semiconductor Corporation PN2369A / MMBT2369A / MMPQ2369 NPN Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 10 mA, IB = 0 I C = 10 µ A, VBE = 0 I C = 10 µ A, IE = 0 I E = 10 µA, I C = 0 VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 125°C 15 40 40 4.
5 0.
4 30 V V V V µA ...


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