| Part Number | PN3567 |
| Manufacturer | Central Semiconductor Corp |
| Title | Small Signal Transistors |
| Description | LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 3... |
| Features |
----300 250 -300 120 -300 200 200 600 600 120 120 300 -120 120 @ VCE (V) @ IC (mA) VCE (SAT) @ IC (V) (mA) Cob fT NF toff
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MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPSA42 MPSA44 MPSA45 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 MPSA70 MPSA75 MPSA76 MPSA77 MPSA92 MPSA94 MPSD04 MPSD54 MPSH10 MP...
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| File Size | 20.68KB |
| Datasheet |
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PN3563 : PN3563 Discrete POWER & Signal Technologies PN3563 C BE TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 30 2.0 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: .
PN3563 : LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30* 30* 30* 30* 40 40* 50* 60* 300 400 25* 25* 25 25 120 100 15 40 15 60 60 12 15 25 30 40 60 40 25 6.0 12 (V) MAX 10 10 10 12 12 6.0 6.0 6.0 4.0 4.0 10 10 10 8.0 8.0 4.0 10 10 10 5.0 6.0 10 10 3.0 3.0 5.0 4.0 3.0 6.0 4.5 6.0 5.0 2.0 4.0 6.0 5.0 5.0 5.0 5.0 4.0 4.0 4.0 *ICES *ICEV MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 250 100 1,000 1,000 100 100 1,000 1,000 10 10 400 10 10 50 50 50 50 50 50 50 35* 10* 10* (V) hFE *hFE (1kHZ) .
PN3564 : LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30* 30* 30* 30* 40 40* 50* 60* 300 400 25* 25* 25 25 120 100 15 40 15 60 60 12 15 25 30 40 60 40 25 6.0 12 (V) MAX 10 10 10 12 12 6.0 6.0 6.0 4.0 4.0 10 10 10 8.0 8.0 4.0 10 10 10 5.0 6.0 10 10 3.0 3.0 5.0 4.0 3.0 6.0 4.5 6.0 5.0 2.0 4.0 6.0 5.0 5.0 5.0 5.0 4.0 4.0 4.0 *ICES *ICEV MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 250 100 1,000 1,000 100 100 1,000 1,000 10 10 400 10 10 50 50 50 50 50 50 50 35* 10* 10* (V) hFE *hFE (1kHZ) .
PN3565 : PN3565 Discrete POWER & Signal Technologies PN3565 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 30 6.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) .
PN3565 : .
PN3565 : LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30* 30* 30* 30* 40 40* 50* 60* 300 400 25* 25* 25 25 120 100 15 40 15 60 60 12 15 25 30 40 60 40 25 6.0 12 (V) MAX 10 10 10 12 12 6.0 6.0 6.0 4.0 4.0 10 10 10 8.0 8.0 4.0 10 10 10 5.0 6.0 10 10 3.0 3.0 5.0 4.0 3.0 6.0 4.5 6.0 5.0 2.0 4.0 6.0 5.0 5.0 5.0 5.0 4.0 4.0 4.0 *ICES *ICEV MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 250 100 1,000 1,000 100 100 1,000 1,000 10 10 400 10 10 50 50 50 50 50 50 50 35* 10* 10* (V) hFE *hFE (1kHZ) .
PN3566 : PN3566 PN3566 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 40 5 600 - 55 ~ 150 Units V V V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition IC = 30mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 10V.
PN3566 : LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30* 30* 30* 30* 40 40* 50* 60* 300 400 25* 25* 25 25 120 100 15 40 15 60 60 12 15 25 30 40 60 40 25 6.0 12 (V) MAX 10 10 10 12 12 6.0 6.0 6.0 4.0 4.0 10 10 10 8.0 8.0 4.0 10 10 10 5.0 6.0 10 10 3.0 3.0 5.0 4.0 3.0 6.0 4.5 6.0 5.0 2.0 4.0 6.0 5.0 5.0 5.0 5.0 4.0 4.0 4.0 *ICES *ICEV MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 250 100 1,000 1,000 100 100 1,000 1,000 10 10 400 10 10 50 50 50 50 50 50 50 35* 10* 10* (V) hFE *hFE (1kHZ) .
PN3567 : .
PN3567 : PN3567 PN3567 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 80 5 600 - 55 ~ 150 Units V V V mA °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition IC = 30mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 75.
PN3568 : PN3568 Discrete POWER & Signal Technologies PN3568 C BE TO-92 NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 60 80 5.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOT.
PN3568 : .
PN3568 : LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30* 30* 30* 30* 40 40* 50* 60* 300 400 25* 25* 25 25 120 100 15 40 15 60 60 12 15 25 30 40 60 40 25 6.0 12 (V) MAX 10 10 10 12 12 6.0 6.0 6.0 4.0 4.0 10 10 10 8.0 8.0 4.0 10 10 10 5.0 6.0 10 10 3.0 3.0 5.0 4.0 3.0 6.0 4.5 6.0 5.0 2.0 4.0 6.0 5.0 5.0 5.0 5.0 4.0 4.0 4.0 *ICES *ICEV MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 250 100 1,000 1,000 100 100 1,000 1,000 10 10 400 10 10 50 50 50 50 50 50 50 35* 10* 10* (V) hFE *hFE (1kHZ) .
PN3569 : .
PN3569 : LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30* 30* 30* 30* 40 40* 50* 60* 300 400 25* 25* 25 25 120 100 15 40 15 60 60 12 15 25 30 40 60 40 25 6.0 12 (V) MAX 10 10 10 12 12 6.0 6.0 6.0 4.0 4.0 10 10 10 8.0 8.0 4.0 10 10 10 5.0 6.0 10 10 3.0 3.0 5.0 4.0 3.0 6.0 4.5 6.0 5.0 2.0 4.0 6.0 5.0 5.0 5.0 5.0 4.0 4.0 4.0 *ICES *ICEV MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 250 100 1,000 1,000 100 100 1,000 1,000 10 10 400 10 10 50 50 50 50 50 50 50 35* 10* 10* (V) hFE *hFE (1kHZ) .
PN3569 : PN3569 PN3569 NPN General Purpose Amplifier • This device is designed for use at general purpose amplifiers and switches requiring collecor currents to 300mA. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 80 5.0 500 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees .