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PN3563

Part Number	PN3563
Manufacturer	Fairchild Semiconductor
Description	NPN RF Amplifier
Published	May 9, 2005
Detailed Description	PN3563 Discrete POWER & Signal Technologies PN3563 C BE TO-92 NPN RF Amplifier This device is designed for use as ...
Datasheet	PN3563 PDF File

Overview

PN3563 Discrete POWER & Signal Technologies PN3563 C BE TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.
0 mA to 30 mA range.
Sourced from Process 43.
See PN918 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 30 2.
0 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characterist...

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