| Part Number | SPD08P06P |
| Manufacturer | Infineon Technologies |
| Title | SIPMOS Power-Transistor |
| Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery ter... |
| Features |
· Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · A Type SPD08P06P SPU08P06P Package P-TO252 Ordering Code Q67040-S4153 ... |
| File Size | 113.95KB |
| Datasheet |
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SPD08P06PG : SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=8.83 A, V DS=48 V.